GT1K2P15D5
Goford Semiconductor
2SK536-TB-E
Part Number：
2SK536-TB-E
Category：
Single FETs, MOSFETs
Manufacturer：
Sanyo
Description：
N-CHANNEL ENHANCEMENT MOS SILICO
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Package / Case TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id -
- Drain to Source Voltage (Vdss) 50 V
- Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
- Vgs (Max) ±12V
- Power Dissipation (Max) 200mW (Ta)
- Operating Temperature 125°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 10 V
- Supplier Device Package 3-CP
- Rds On (Max) @ Id, Vgs 20Ohm @ 10mA, 10V
