GT1K2P15D5
Goford Semiconductor
AIMBG75R090M1HXTMA1
Part Number：
AIMBG75R090M1HXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
AIMBG75R090M1HXTMA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Power Dissipation (Max) 128W (Tc)
- Supplier Device Package PG-TO263-7
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -5V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 18 V
- Drain to Source Voltage (Vdss) 750 V
- Rds On (Max) @ Id, Vgs 83mOhm @ 7.4A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 2.6mA
- Input Capacitance (Ciss) (Max) @ Vds 542 pF @ 500 V
