GT1K2P15D5
Goford Semiconductor
AIMCQ120R080M1TXTMA1
Part Number：
AIMCQ120R080M1TXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SIC_DISCRETE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 20 V
- Power Dissipation (Max) 211W (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Package / Case 22-PowerBSOP Module
- Supplier Device Package PG-HDSOP-22
- Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id 5.1V @ 3.3mA
- Input Capacitance (Ciss) (Max) @ Vds 671 pF @ 800 V
