GT1K2P15D5
Goford Semiconductor
AIMZHN120R020M1TXKSA1
Part Number：
AIMZHN120R020M1TXKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SIC_DISCRETE
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 82 nC @ 20 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 429W (Tc)
- Vgs (Max) +23V, -5V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Rds On (Max) @ Id, Vgs 25mOhm @ 43A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 2667 pF @ 800 V
- Supplier Device Package PG-TO247-4-14
- Vgs(th) (Max) @ Id 5.1V @ 13.7mA
