GT1K2P15D5
Goford Semiconductor
AMTP65H150G4PS
Part Number：
AMTP65H150G4PS
Category：
Single FETs, MOSFETs
Manufacturer：
Analog Power Inc.
Description：
GAN FET N-CH 650V TO-220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Vgs(th) (Max) @ Id 1V @ 250µA
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Technology GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
- Rds On (Max) @ Id, Vgs 150mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 6 V
