GT1K2P15D5
Goford Semiconductor
AOM020V120X2Q
Part Number：
AOM020V120X2Q
Category：
Single FETs, MOSFETs
Manufacturer：
Alpha & Omega Semiconductor Inc.
Description：
1200V SILICON CARBIDE MOSFET
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 89A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 348W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 27mA
- Vgs (Max) +15V, -5V
- Rds On (Max) @ Id, Vgs 28mOhm @ 27A, 15V
- Gate Charge (Qg) (Max) @ Vgs 166 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 5180 pF @ 800 V
