GT1K2P15D5
Goford Semiconductor
APT18M80S
Part Number：
APT18M80S
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 800V 19A D3PAK
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
- Power Dissipation (Max) 500W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Vgs (Max) ±30V
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Input Capacitance (Ciss) (Max) @ Vds 3760 pF @ 25 V
- Supplier Device Package D3PAK
- Rds On (Max) @ Id, Vgs 530mOhm @ 9A, 10V
