GT1K2P15D5
Goford Semiconductor
ASZM040120T
Part Number：
ASZM040120T
Category：
Single FETs, MOSFETs
Manufacturer：
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description：
N-CHANNEL SILICON CARBIDE POWER
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 340W (Tc)
- Current - Continuous Drain (Id) @ 25°C 68A (Tc)
- Package / Case TO-247-4
- Technology SiC (Silicon Carbide Junction Transistor)
- Vgs (Max) +25V, -10V
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Vgs(th) (Max) @ Id 3.6V @ 9.5mA
- Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 20V
- Gate Charge (Qg) (Max) @ Vgs 87 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2820 pF @ 1000 V
