GT1K2P15D5
Goford Semiconductor
BSM180C12P3C202
Part Number：
BSM180C12P3C202
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
SICFET N-CH 1200V 180A MODULE
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Supplier Device Package Module
- Rds On (Max) @ Id, Vgs -
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) -
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 880W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 50mA
- Vgs (Max) +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
