GT1K2P15D5
Goford Semiconductor
BUK661R6-30C118
Part Number：
BUK661R6-30C118
Category：
Single FETs, MOSFETs
Manufacturer：
NXP USA Inc.
Description：
N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 30 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs (Max) ±16V
- Supplier Device Package D2PAK
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 1mA
- Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
- Power Dissipation (Max) 306W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V
