GT1K2P15D5
Goford Semiconductor
BUK7Y3R1-80MX
Part Number：
BUK7Y3R1-80MX
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
BUK7Y3R1-80M/SOT669/LFPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 160A (Tc)
- Drain to Source Voltage (Vdss) 80 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Package / Case SC-100, SOT-669
- Supplier Device Package LFPAK56, Power-SO8
- Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
- Rds On (Max) @ Id, Vgs 3.1mOhm @ 25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 6986 pF @ 40 V
