GT1K2P15D5
Goford Semiconductor
C2M1000170J-TR
Part Number：
C2M1000170J-TR
Category：
Single FETs, MOSFETs
Manufacturer：
Wolfspeed, Inc.
Description：
SICFET N-CH 1700V 5.3A D2PAK-7
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
- Supplier Device Package TO-263-7
- Power Dissipation (Max) 78W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Drain to Source Voltage (Vdss) 1700 V
- Vgs (Max) +25V, -10V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
- Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
