GT1K2P15D5
Goford Semiconductor
C3M0120065J-TR
Part Number：
C3M0120065J-TR
Category：
Single FETs, MOSFETs
Manufacturer：
Wolfspeed, Inc.
Description：
SIC, MOSFET, 120M, 650V, TO-263-
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 86W (Tc)
- Operating Temperature -40°C ~ 175°C (TJ)
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +19V, -8V
- Rds On (Max) @ Id, Vgs 157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id 3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 400 V
