GT1K2P15D5
Goford Semiconductor
CSD18536KTTT
Part Number：
CSD18536KTTT
Category：
Single FETs, MOSFETs
Manufacturer：
Texas Instruments
Description：
MOSFET N-CH 60V 200A/349A DDPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Supplier Device Package TO-263 (DDPAK-3)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Power Dissipation (Max) 375W (Tc)
- Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 11430 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C 200A (Ta), 349A (Tc)
