GT1K2P15D5
Goford Semiconductor
DIJ2A3N65
Part Number：
DIJ2A3N65
Category：
Single FETs, MOSFETs
Manufacturer：
Diotec Semiconductor
Description：
MOSFET ITO-220AB N 650V 2.3A
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3 Full Pack
- Power Dissipation (Max) 30W (Tc)
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
- Supplier Device Package ITO-220F
- Rds On (Max) @ Id, Vgs 2.6Ohm @ 3.5A, 10V
