GT1K2P15D5
Goford Semiconductor
DIW170SIC049
Part Number：
DIW170SIC049
Category：
Single FETs, MOSFETs
Manufacturer：
Diotec Semiconductor
Description：
SIC MOSFET, TO-247-3L, N, 67A, 1
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 67A (Tc)
- Supplier Device Package TO-247
- Power Dissipation (Max) 357W (Tc)
- Drain to Source Voltage (Vdss) 1700 V
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs(th) (Max) @ Id 4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V
- Rds On (Max) @ Id, Vgs 49mOhm @ 40A, 18V
- Vgs (Max) +18V, -4V
- Input Capacitance (Ciss) (Max) @ Vds 3046 pF @ 1000 V
