GT1K2P15D5
Goford Semiconductor
DMN2710UFBQ-7
Part Number：
DMN2710UFBQ-7
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±6V
- Package / Case 3-UFDFN
- Supplier Device Package X1-DFN1006-3
- Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
- Power Dissipation (Max) 720mW (Ta)
- Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 42 pF @ 16 V
