GT1K2P15D5
Goford Semiconductor
DMWSH120H28SM3Q
Part Number：
DMWSH120H28SM3Q
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
SICFET N-CH 1200V TO-247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 405W (Tc)
- Vgs (Max) +19V, -8V
- Vgs(th) (Max) @ Id 3.6V @ 17.7mA
- Rds On (Max) @ Id, Vgs 28.5mOhm @ 50A, 15V
- Current - Continuous Drain (Id) @ 25°C 97.4A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 175 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 3905 pF @ 1000 V
