GT1K2P15D5
Goford Semiconductor
EPC2203
Part Number：
EPC2203
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
GANFET N-CH 80V 1.7A DIE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) -
- Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Package / Case Die
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 80 V
- Technology GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id 2.5V @ 600µA
- Vgs (Max) +5.75V, -4V
- Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.83 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 50 V
