GT1K2P15D5
Goford Semiconductor
ES6U3T2CR
Part Number：
ES6U3T2CR
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 30V 1.4A WEMT6
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Drain to Source Voltage (Vdss) 30 V
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Package / Case 6-SMD, Flat Leads
- FET Feature Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C 1.4A (Ta)
- Power Dissipation (Max) 800mW (Ta)
- Rds On (Max) @ Id, Vgs 240mOhm @ 1.4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 10 V
- Supplier Device Package 6-WEMT
- Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 5 V
