GT1K2P15D5
Goford Semiconductor
FDI9409-F085
Part Number：
FDI9409-F085
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
FDI9409 - N-CHANNEL POWERTRENCH
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 25 V
- Rds On (Max) @ Id, Vgs 3.8mOhm @ 80A, 10V
- Supplier Device Package I2PAK (TO-262)
- Power Dissipation (Max) 94W (Tj)
