English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
Technical Support Cluster Technology
Sitemap
English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
FDZ3N513ZT
FDZ3N513ZT
Part Number:
FDZ3N513ZT
Category:
Single FETs, MOSFETs
Manufacturer:
Fairchild Semiconductor
Description:
MOSFET N-CH 30V 1.1A 4WLCSP
Packaging:
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Grade
-
Qualification
-
Power Dissipation (Max)
1W (Ta)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 125°C (TJ)
Drain to Source Voltage (Vdss)
30 V
FET Feature
Schottky Diode (Isolated)
Supplier Device Package
4-WLCSP (1x1)
Package / Case
4-XFBGA, WLCSP
Current - Continuous Drain (Id) @ 25°C
1.1A
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
462mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 15 V
Vgs (Max)
+5.5V, -300mV
Recommended Models
GT1K2P15D5
Goford Semiconductor
GT040N04T
Goford Semiconductor
CMSP3407T6-HF
Comchip Technology
IGT65R035D2ATMA1
Infineon Technologies
AC3M0060065D
APSEMI
AC3M0025065D
APSEMI
AC3M0040120D
APSEMI
AC3M0075120D
APSEMI
AC2M0040120D
APSEMI
AC3M0040120K
APSEMI
+852 64184651
selena@mpslimited.hk
Add to RFQ
Back to top