GT1K2P15D5
Goford Semiconductor
FQB34P10TM-F085C
Part Number：
FQB34P10TM-F085C
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs (Max) ±25V
- Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
- Current - Continuous Drain (Id) @ 25°C 33.5A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V
