GT1K2P15D5
Goford Semiconductor
FQB7N60TM-WS
Part Number：
FQB7N60TM-WS
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
FQB7N60 - MOSFET N-CHANNEL SINGL
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
- Drain to Source Voltage (Vdss) 600 V
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V
- Rds On (Max) @ Id, Vgs 1Ohm @ 3.7A, 10V
- Power Dissipation (Max) 3.13W (Ta), 142W (Tc)
