GT1K2P15D5
Goford Semiconductor
FQI4N80TU
Part Number：
FQI4N80TU
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
MOSFET N-CH 800V 3.9A I2PAK
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Drain to Source Voltage (Vdss) 800 V
- Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
- Vgs (Max) ±30V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-262 (I2PAK)
- Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
- Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
- Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
