GT1K2P15D5
Goford Semiconductor
FQPF19N10
Part Number：
FQPF19N10
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
MOSFET N-CH 100V 13.6A TO220F
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Package / Case TO-220-3 Full Pack
- Vgs (Max) ±25V
- Power Dissipation (Max) 38W (Tc)
- Supplier Device Package TO-220F-3
- Current - Continuous Drain (Id) @ 25°C 13.6A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 25 V
- Rds On (Max) @ Id, Vgs 100mOhm @ 6.8A, 10V
