GT1K2P15D5
Goford Semiconductor
G2K2P10D3E
Part Number：
G2K2P10D3E
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Power Dissipation (Max) 31W (Tc)
- Package / Case 8-PowerVDFN
- Supplier Device Package 8-DFN (3.15x3.05)
- Rds On (Max) @ Id, Vgs 210mOhm @ -6A, -10V
- Input Capacitance (Ciss) (Max) @ Vds 1668 pF @ -50 V
