GT1K2P15D5
Goford Semiconductor
G2R1000MT33J
Part Number：
G2R1000MT33J
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
SIC MOSFET N-CH 4A TO263-7
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Power Dissipation (Max) 74W (Tc)
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 3300 V
- Vgs(th) (Max) @ Id 3.5V @ 2mA
- Input Capacitance (Ciss) (Max) @ Vds 238 pF @ 1000 V
