GT1K2P15D5
Goford Semiconductor
G3R12MT12K
Part Number：
G3R12MT12K
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
1200V 12M TO-247-4 G3R SIC MOSFE
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Vgs (Max) +22V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Current - Continuous Drain (Id) @ 25°C 157A (Tc)
- Rds On (Max) @ Id, Vgs 13mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id 2.7V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs 288 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 9335 pF @ 800 V
- Power Dissipation (Max) 567W (Tc)
