GT1K2P15D5
Goford Semiconductor
G3R20MT17N
Part Number：
G3R20MT17N
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
SIC MOSFET N-CH 100A SOT227
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case SOT-227-4, miniBLOC
- Supplier Device Package SOT-227
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Vgs (Max) ±15V
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Rds On (Max) @ Id, Vgs 26mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id 2.7V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 400 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 10187 pF @ 1000 V
- Power Dissipation (Max) 523W (Tc)
