GT1K2P15D5
Goford Semiconductor
GA04JT17-247
Part Number：
GA04JT17-247
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
TRANS SJT 1700V 4A TO247AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Feature -
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id -
- Package / Case TO-247-3
- FET Type -
- Operating Temperature 175°C (TJ)
- Vgs (Max) -
- Power Dissipation (Max) 106W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) -
- Drain to Source Voltage (Vdss) 1700 V
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C)
- Rds On (Max) @ Id, Vgs 480mOhm @ 4A
- Supplier Device Package TO-247AB
