GT1K2P15D5
Goford Semiconductor
GA20JT12-263
Part Number：
GA20JT12-263
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
TRANS SJT 1200V 45A D2PAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Feature -
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package TO-263-7
- FET Type -
- Current - Continuous Drain (Id) @ 25°C 45A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Operating Temperature 175°C (TJ)
- Vgs (Max) -
- Drive Voltage (Max Rds On, Min Rds On) -
- Technology SiC (Silicon Carbide Junction Transistor)
- Rds On (Max) @ Id, Vgs 60mOhm @ 20A
- Input Capacitance (Ciss) (Max) @ Vds 3091 pF @ 800 V
- Power Dissipation (Max) 282W (Tc)
