GT1K2P15D5
Goford Semiconductor
GAN039-650NTBJ
Part Number：
GAN039-650NTBJ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
GAN CASCODE FETS
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Drain to Source Voltage (Vdss) 650 V
- Technology GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id 4.6V @ 1mA
- Power Dissipation (Max) 250W (Ta)
- Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
- Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 400 V
- Supplier Device Package CCPAK1212i
- Current - Continuous Drain (Id) @ 25°C 58.5A (Ta)
