GT1K2P15D5
Goford Semiconductor
GAN063-650WSAQ
Part Number：
GAN063-650WSAQ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
GANFET N-CH 650V 34.5A TO247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Package / Case TO-247-3
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247-3
- Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
- Power Dissipation (Max) 143W (Tc)
- Technology GaNFET (Cascode Gallium Nitride FET)
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
- Current - Continuous Drain (Id) @ 25°C 34.5A (Tc)
