GT1K2P15D5
Goford Semiconductor
GAN3R2-100CBEAZ
Part Number：
GAN3R2-100CBEAZ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Package / Case 8-XFBGA, WLCSP
- Current - Continuous Drain (Id) @ 25°C 60A
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Vgs(th) (Max) @ Id 2.5V @ 9mA
- Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
- Power Dissipation (Max) 394W
- Supplier Device Package 8-WLCSP (3.5x2.13)
