GT1K2P15D5
Goford Semiconductor
GS66506TMRXUSA1
Part Number：
GS66506TMRXUSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
GS66506T-MR
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Last Time Buy
- Mounting Type Surface Mount
- Supplier Device Package -
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) -
- Package / Case 4-SMD, No Lead
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 22.5A (Tc)
- Technology GaNFET (Gallium Nitride)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7V, -10V
- Rds On (Max) @ Id, Vgs 90mOhm @ 6.7A, 6V
- Vgs(th) (Max) @ Id 1.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 400 V
