GT1K2P15D5
Goford Semiconductor
GSJD60R360
Part Number：
GSJD60R360
Category：
Single FETs, MOSFETs
Manufacturer：
Good-Ark Semiconductor
Description：
MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
- Vgs (Max) ±30V
- Power Dissipation (Max) 89W (Tc)
- Supplier Device Package TO-252 (DPAK)
- Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 925 pF @ 100 V
