GT1K2P15D5
Goford Semiconductor
GT110N06D3
Part Number：
GT110N06D3
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Power Dissipation (Max) 25W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Package / Case 8-PowerVDFN
- Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V
- Supplier Device Package 8-DFN (3.15x3.05)
- Input Capacitance (Ciss) (Max) @ Vds 1059 pF @ 30 V
