GT1K2P15D5
Goford Semiconductor
HAT1091C-EL-E
Part Number：
HAT1091C-EL-E
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas
Description：
HAT1091C-EL-E - SILICON P CHANNE
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Power Dissipation (Max) 830mW (Ta)
- Package / Case 6-SMD, Flat Leads
- Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 4.5 V
- Vgs(th) (Max) @ Id 1.4V @ 1mA
- Supplier Device Package 6-CMFPAK
- Rds On (Max) @ Id, Vgs 175mOhm @ 800mA, 4.5V
