GT1K2P15D5
Goford Semiconductor
HUFA75639S3ST
Part Number：
HUFA75639S3ST
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
56A, 100V, 0.025OHM, N-CHANNEL,
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
- Power Dissipation (Max) 200W (Tc)
- Supplier Device Package TO-263AB (D2PAK)
- Current - Continuous Drain (Id) @ 25°C 56A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 56A, 10V
