English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
Technical Support Cluster Technology
Sitemap
English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
IGOT65R035D2AUMA1
IGOT65R035D2AUMA1
Part Number:
IGOT65R035D2AUMA1
Category:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IGOT65R035D2AUMA1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Quantity
RFQ Now
Add to RFQ
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
44A (Tc)
Drain to Source Voltage (Vdss)
650 V
Rds On (Max) @ Id, Vgs
-
Drive Voltage (Max Rds On, Min Rds On)
-
Power Dissipation (Max)
134W (Tc)
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
-10V
Package / Case
20-BFSOP (0.295", 7.50mm Width)
Supplier Device Package
PG-DSO-20-91
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 400 V
Vgs(th) (Max) @ Id
1.6V @ 4.2mA
Recommended Models
GT1K2P15D5
Goford Semiconductor
GT040N04T
Goford Semiconductor
CMSP3407T6-HF
Comchip Technology
IGT65R035D2ATMA1
Infineon Technologies
AC3M0060065D
APSEMI
AC3M0025065D
APSEMI
AC3M0040120D
APSEMI
AC3M0075120D
APSEMI
AC2M0040120D
APSEMI
AC3M0040120K
APSEMI
+852 64184651
selena@mpslimited.hk
Add to RFQ
Back to top