GT1K2P15D5
Goford Semiconductor
IMBG120R034M2HXTMA1
Part Number：
IMBG120R034M2HXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SIC DISCRETE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 58A (Tc)
- Power Dissipation (Max) 278W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Supplier Device Package PG-TO263-7
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 18 V
- Vgs(th) (Max) @ Id 5.1V @ 6.4mA
- Input Capacitance (Ciss) (Max) @ Vds 1510 pF @ 800 V
