GT1K2P15D5
Goford Semiconductor
IMBG40R015M2HXTMA1
Part Number：
IMBG40R015M2HXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
SIC-MOS
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 400 V
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Technology SiCFET (Silicon Carbide)
- Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
- Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Supplier Device Package PG-TO263-7-11
- Current - Continuous Drain (Id) @ 25°C 11.7A (Ta), 111A (Tc)
- Rds On (Max) @ Id, Vgs 19.1mOhm @ 27.1A, 18V
- Vgs(th) (Max) @ Id 5.6V @ 9.7mA
- Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 200 V
