GT1K2P15D5
Goford Semiconductor
IMWH170R650M1XKSA1
Part Number：
IMWH170R650M1XKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
IMWH170R650M1XKSA1
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 88W (Tc)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
- Vgs(th) (Max) @ Id 5.7V @ 1.7mA
- Vgs (Max) 15V, 12V
- Supplier Device Package PG-TO247-3-U04
- Rds On (Max) @ Id, Vgs 580mOhm @ 1.5A, 15V
- Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds 337 pF @ 1000 V
