GT1K2P15D5
Goford Semiconductor
IPB180P04P4L02AUMA2
Part Number：
IPB180P04P4L02AUMA2
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Power Dissipation (Max) 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Drain to Source Voltage (Vdss) 40 V
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Supplier Device Package PG-TO263-7-3
- Vgs (Max) +5V, -16V
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V
- Vgs(th) (Max) @ Id 2.2V @ 410µA
- Input Capacitance (Ciss) (Max) @ Vds 18700 pF @ 25 V
