GT1K2P15D5
Goford Semiconductor
IPP029N15NM6AKSA1
Part Number：
IPP029N15NM6AKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
TRENCH >=100V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 150 V
- Supplier Device Package PG-TO220-3-1
- Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V
- Power Dissipation (Max) 3.8W (Ta), 395W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
- Vgs(th) (Max) @ Id 4V @ 276µA
- Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 75 V
- Current - Continuous Drain (Id) @ 25°C 24A (Ta), 197A (Tc)
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 15V
