GT1K2P15D5
Goford Semiconductor
IPT017N10NM5LF2ATMA1
Part Number：
IPT017N10NM5LF2ATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
IPT017N10NM5LF2ATMA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
- Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
- Supplier Device Package PG-HSOF-8-1
- Package / Case 8-PowerSFN
- Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 50 V
- Current - Continuous Drain (Id) @ 25°C 32A (Ta), 321A (Tc)
- Rds On (Max) @ Id, Vgs 1.6mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id 3.9V @ 280µA
