GT1K2P15D5
Goford Semiconductor
IQD063N15NM5CGATMA1
Part Number：
IQD063N15NM5CGATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
TRENCH >=100V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Drain to Source Voltage (Vdss) 150 V
- Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 75 V
- Package / Case 9-PowerTDFN
- Supplier Device Package PG-TTFN-9-U02
- Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
- Current - Continuous Drain (Id) @ 25°C 14.1A (Ta), 148A (Tc)
- Rds On (Max) @ Id, Vgs 6.32mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 4.6V @ 159µA
