GT1K2P15D5
Goford Semiconductor
IQDH45N04LM6CGSCATMA1
Part Number：
IQDH45N04LM6CGSCATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
OPTIMOS POWER MOSFETS 25 V - 150
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 78 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 20 V
- Package / Case 9-PowerWDFN
- Power Dissipation (Max) 3W (Ta), 333W (Tc)
- Vgs(th) (Max) @ Id 2.3V @ 1.449mA
- Rds On (Max) @ Id, Vgs 0.49mOhm @ 50A, 10V
- Supplier Device Package PG-WHTFN-9-U02
- Current - Continuous Drain (Id) @ 25°C 58A (Ta), 611A (Tc)
