GT1K2P15D5
Goford Semiconductor
IRF630
Part Number：
IRF630
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 200V 9A TO220AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 200 V
- Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
